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180504 ||| eng |
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|a 9783319749891
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| 100 |
1 |
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|a Cancellieri, Claudia
|e [editor]
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| 245 |
0 |
0 |
|a Spectroscopy of Complex Oxide Interfaces
|h Elektronische Ressource
|b Photoemission and Related Spectroscopies
|c edited by Claudia Cancellieri, Vladimir N. Strocov
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| 250 |
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|a 1st ed. 2018
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| 260 |
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|a Cham
|b Springer International Publishing
|c 2018, 2018
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| 300 |
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|a XIV, 320 p
|b online resource
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| 505 |
0 |
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|a Introduction -- Growth of TMO Interfaces -- Transport Properties of TMO Interfaces -- Photoemission of Bare TMO Surfaces -- Hard X-ray Photoelectron Spectroscopy -- ARPES of TMO Interfaces -- X-ray Standing Wave Spectroscopy -- Dynamical Effects at the TMO Interfaces -- Ab-initio Calculations of TMO Band Structure -- Interfacial Magnetism -- RIXS on Nickelates -- Conclusions
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| 653 |
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|a Surface and Interface and Thin Film
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| 653 |
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|a Laser
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| 653 |
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|a Spectrum analysis
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| 653 |
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|a Thin films
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| 653 |
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|a Spectroscopy
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| 653 |
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|a Surfaces, Interfaces and Thin Film
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| 653 |
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|a Lasers
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| 653 |
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|a Materials / Analysis
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| 653 |
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|a Surfaces (Technology)
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| 653 |
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|a Characterization and Analytical Technique
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| 653 |
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|a Surfaces (Physics)
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| 700 |
1 |
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|a Strocov, Vladimir N.
|e [editor]
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| 041 |
0 |
7 |
|a eng
|2 ISO 639-2
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| 989 |
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|b Springer
|a Springer eBooks 2005-
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| 490 |
0 |
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|a Springer Series in Materials Science
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| 028 |
5 |
0 |
|a 10.1007/978-3-319-74989-1
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| 856 |
4 |
0 |
|u https://doi.org/10.1007/978-3-319-74989-1?nosfx=y
|x Verlag
|3 Volltext
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| 082 |
0 |
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|a 620.112
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| 520 |
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|a This book summarizes the most recent and compelling experimental results for complex oxide interfaces. The results of this book were obtained with the cutting-edge photoemission technique at highest energy resolution. Due to their fascinating properties for new-generation electronic devices and the challenge of investigating buried regions, the book chiefly focuses on complex oxide interfaces. The crucial feature of exploring buried interfaces is the use of soft X-ray angle-resolved photoemission spectroscopy (ARPES) operating on the energy range of a few hundred eV to increase the photoelectron mean free path, enabling the photons to penetrate through the top layers – in contrast to conventional ultraviolet (UV)-ARPES techniques. The results presented here, achieved by different research groups around the world, are summarized in a clearly structured way and discussed in comparison with other photoemission spectroscopy techniques and other oxide materials. They are complemented and supported by the most recent theoretical calculations as well as results of complementary experimental techniques including electron transport and inelastic resonant X-ray scattering.
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