Electronic Structure of Metal-Semiconductor Contacts
Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic pr...
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| Format: | eBook |
| Language: | English |
| Published: |
Dordrecht
Springer Netherlands
1990, 1990
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| Edition: | 1st ed. 1990 |
| Series: | Perspectives in Condensed Matter Physics, A Critical Reprint Series
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| Subjects: | |
| Online Access: | |
| Collection: | Springer Book Archives -2004 - Collection details see MPG.ReNa |
Table of Contents:
- Schottky Barrier Heights and the Continuum of Gap States, Phys. Rev. Lett. (1984)
- Schottky Barrier Formation at Single-Crystal Metal Semiconductor Interfaces, Phys. Rev. Lett. (1984)
- Reflection High-energy Electron Diffraction Study of the Growth of In on GaAs (110) at Different Temperatures, J. Vac. Sci. Tecnol. B (1986)
- Direct Variation of Metal-GaAs Schottky Barrier Height by the Influence of Interface S, Se and Te, AppL Phys. Lett. (1985)
- Interface Potential Changes and Scottky Barriers, Phys. Rev. B (1985)
- Ruthenium-Induced Surface Staes of n-GaAs Surfaces, J. Vac. Sci. Technol. B. (1986)
- Metallization and Scottky Barrier Formation, Phys. Rev. B (1986)
- On the Present Understanding of Schottky Contacts , Festkörperprobleme (1986)
- Role of Virtual Gap States and Defects in Metal Semiconductor Contacts Phys. Rev. Lett. (1987)
- Initial Stages of Schottky Barrier Formation: Temperature Effects, J. Vac. Sci. Technol. B (1987)
- Kinetics Study of Initial Stage Band Bending at Metal GaAs (110) Interfaces, J. Vac. Sci. Technol. B (1987)
- The Schottky Contact in a Xe/Metal Interface Probed by Inverse Photoemission, Europhys. Lett. (1987)
- Origin of the Excess Capacitance at Intimate Schottky Contacts, Phys. Rev. Lett. (1988)
- Correlation between EfPinning and Development Metallic Character in Ag Overlayers on GaAs (110), Phys. Rev. Lett. (1988)
- Direct Investigation of Subsurface Interface Electronic Structure by Ballistic-Electron-Emission Microscopy, Phys. Rev. Lett. (1988)
- Chemical Trends in Schottky Barriers: Charge Transfer into Adsorbate Induced Gap States and Defects, Phys. Rev. B (1988)
- The Advanced Unified Defect Model forSchottky Barrier Formation, J. Vac. Sci. Technol. B (1988)
- Screening and Derealization Effects in Schottky Barrier Formation, J. Vac. Sci. Technol. B (1988)
- Tight-Binding Model of Surface Donor-States Induced by Metal Adatoms on GaAs (110) Surfaces, Europhys. Lett. (1988)
- Switching of Band Bending at the Nonreactive CsOx/GaAs (110) Interface, Phys. Rev. Lett. (1989)
- Metallicity and Gap States in Tunneling to Fe Clusters on GaAs (110), Phys. Rev. Lett. (1989)
- Density of States and Barrier Height of Metal-Si Contacts, J. Phys. C: Solid State Physics (1971)
- Metal-semiconductor Junctions for (110) Surfaces of Zinc-blende Compunds, Phys. Rev. B (1976)
- Electronic Structure of a Metal Semiconductor Interface, Phys. Rev. B (1976)
- Ionicity and the Theory of Schottky Barriers, Phys. Rev. B (1977)
- Chemical Trends in Metal-semiconductor Barrier Heights, Phys. Rev. B (1978)
- Transition in Schottky Barrier Formation with Chemical Reactivity, Phys. Rev. Lett. (1978)
- New and Unified Model for Schottky Barrier and III-V Insulator Interface States Formation, J. Vac. Sci. Technol. (1979)
- Schottky Barriers: An Effective Work Function Model, AppL Phys. Lett. (1981)
- The Foramtion of the Schottky Barrier at the V/Si Interface, J. Vac. Sci. Technol. (1982)
- Formation of Ultrathin Single- Crystal Silicide Films on Si: Surface and Interfacial Stabilization of Si-NiSi2Epitaxial Strucutures, Phys. Rev. Lett. (1983)
- 1. Preliminary Remarks
- 2. Conceptual Models
- 3. Computational Results
- 4. Experimental Data
- 5. Surface-Science Approach to Schottky Contacts
- 6. Concluding Remarks
- References:
- Reprinted Articles
- Additional Reference
- Reprinted Articles
- Ueber die Stromleitung durch Schwefelmetalle, Pogg. Ann. (1874)
- Zum Mechanismus der Richtwirkung in Kupferoxydulgleichrichtern, Physik. Z. (1929)
- Halbleitertheorie der Sperrschicht, Naturwissenschaften (1938)
- Note on the Contact between a Metal and an Insulator or Semiconductor, Proc. Camb. Phil. Soc. (1938)
- Abweichungen vom Ohmschen Gesetz in Halbleitern, Physik. Z. (1940)
- Surface States and Rectification at a Metal Semiconductor Contact, Phys. Rev. (1947)
- Surface States and Barrier Height of Metal Semiconductor Systems, J. Appl. Phys. (1965)
- Theory of Surface States, Phys. Rev. (1965)
- Fundamental Transition in the Electronic Nature of Solids, Phys. Rev. Lett. (1969)