MOSFET Models for VLSI Circuit Simulation : Theory and Practice

Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has...

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Main Author: Arora, Narain D.
Corporate Author: SpringerLink (Online service)
Format: eBook
Language:English
Published: Vienna Springer Vienna 1993, 1993
Edition:1st ed. 1993
Series:Computational Microelectronics
Subjects:
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
Table of Contents:
  • 7.4 Short-Channel Charge Model
  • 7.5 Limitations of the Quasi-Static Model
  • 7.6 Small-Signal Model Parameters
  • References
  • 8 Modeling Hot-Carrier Effects
  • 8.1 Substrate Current Model
  • 8.2 Gate Current Model
  • 8.3 Correlation of Gate and Substrate Current
  • 8.4 Mechanism of MOSFET Degradation
  • 8.5 Measure of Degradation—Device Lifetime
  • 8.6 Impact of Degradation on Circuit Performance
  • 8.7 Temperature Dependence of Device Degradation
  • References
  • 9 Data Acquisition and Model Parameter Measurements
  • 9.1 Data Acquisition
  • 9.2 Gate-Oxide Capacitance Measurement
  • 9.3 Measurement of Doping Profile in Silicon
  • 9.4 Measurement of Threshold Voltage
  • 9.5 Determination of Body Factor ?
  • 9.6 Flat Band Voltage
  • 9.7 Drain Induced Barrier Lowering (DIBL) Parameter
  • 9.8 Determination of Subthreshold Slope
  • 9.9 Carrier Inversion Layer Mobility Measurement
  • 9.10 Determination of Effective Channel Length and Width
  • 1 Overview
  • 1.1 Circuit Design with MOSFETs
  • 1.2 MOSFET Modeling
  • 1.3 Model Parameter Determination
  • 1.4 Interconnect Modeling
  • 1.5 Subjects Covered
  • References
  • 2 Review of Basic Semiconductor and pn Junction Theory
  • 2.1 Energy Band Model
  • 2.2 Intrinsic Semiconductor
  • 2.3 Extrinsic or Doped Semiconductor
  • 2.4 Electrical Conduction
  • 2.5 pn Junction at Equilibrium
  • 2.6 Diode Current-Voltage Characteristics
  • 2.7 Diode Dynamic Behavior
  • 2.8 Real pn Junction
  • 2.9 Diode Circuit Model
  • 2.10 Temperature Dependent Diode Model Parameters
  • References
  • 3 MOS Transistor Structure and Operation
  • 3.1 MOSFET Structure
  • 3.2 MOSFET Characteristics
  • 3.3 MOSFET Scaling
  • 3.4 Hot-Carrier Effects
  • 3.5 VLSI Device Structures
  • 3.6 MOSFET Parasitic Elements
  • 3.7 MOSFET Length and Width Definitions
  • 3.8 MOSFET Circuit Models
  • References
  • 4 MOS Capacitor
  • 4.1 MOS Capacitor with No Applied Voltage
  • 4.2 MOS Capacitor at Non-Zero Bias
  • 12.3 Statistical Analysis with Parameter Correlation
  • 12.4 Factor Analysis
  • 12.5 Optimization Method
  • References
  • Appendix A. Important Properties of Silicon, Silicon Dioxide and Silicon Nitride at 300 K
  • Appendix B. Some Important Physical Constants at 300 K
  • Appendix C. Unit Conversion Factors
  • Appendix D. Magnitude Prefixes
  • Appendix F. Charge Based MOSFET Intrinsic Capacitances
  • Appendix G. Linear Regression
  • Appendix H. Basic Statistical and Probability Theory
  • Appendix I. List of Widely Used Statistical Package Programs
  • 4.3 Capacitance of MOS Structures
  • 4.4 Deviation from Ideal C-V Curves
  • 4.5 Anomalous C-V Curve (Polysilicon Depletion Effect)
  • 4.6 MOS Capacitor Applications
  • 4.7 Nonuniformly Doped Substrate and Flat Band Voltage
  • References
  • 5 Threshold Voltage
  • 5.1 MOSFET with Uniformly Doped Substrate
  • 5.2 Nonuniformly Doped MOSFET
  • 5.3 Threshold Voltage Variations with Device Length andWidth
  • 5.4 Temperature Dependence of the Threshold voltage
  • References
  • 6 MOSFET DC Model
  • 6.1 Drain Current Calculations
  • 6.2 Pao-Sah Model
  • 6.3 Charge-Sheet Model
  • 6.4 Piece-Wise Drain Current Model for EnhancementDevices
  • 6.5 Drain Current Model for Depletion Devices
  • 6.6 Effective Mobility
  • 6.7 Short-Geometry Models
  • 6.8 Impact of Source-Drain Resistance on Drain Current
  • 6.9 Temperature Dependence of the Drain Current
  • References
  • 7 Dynamic Model
  • 7.1 Intrinsic Charges and Capacitances
  • 7.2 Charge-Based Capacitance Model
  • 7.3 Long-Channel Charge Model
  • 9.11 Determination of Drain Saturation Voltage
  • 9.12 Measurement of MOSFET Intrinsic Capacitances
  • 9.13 Measurement of Gate Overlap Capacitance
  • 9.14 Measurement of MOSFET Source/Drain Diode JunctionParameters
  • References
  • 10 Model Parameter Extraction Using Optimization Method
  • 10.1 Model Parameter Extraction
  • 10.2 Basics Definitions in Optimization
  • 10.3 Optimization Methods
  • 10.4 Some Remarks on Parameter Extraction Using OptimizationTechnique
  • 10.5 Confidence Limits on Estimated Model Parameter
  • 10.6 Parameter Extraction Using Optimizer
  • References
  • 11 SPICE Diode and MOSFET Models and Their Parameters
  • 11.1 Diode Model
  • 11.2 MOSFET Level 1 Model
  • 11.3 MOSFET Level 2 Model
  • 11.4 MOSFET Level 3 Model
  • 11.5 MOSFET Level 4 Model
  • 11.6 Comparison of the Four MOSFET Models
  • References
  • 12 Statistical Modeling and Worst-Case Design Parameters
  • 12.1 Methods of Generating Worst Case Parameters
  • 12.2 Model Parameter Sensitivity