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140122 ||| eng |
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|a 9783709190432
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| 100 |
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|a Graaff, Henk C. de
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| 245 |
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|a Compact Transistor Modelling for Circuit Design
|h Elektronische Ressource
|c by Henk C. de Graaff, Francois M. Klaassen
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| 250 |
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|a 1st ed. 1990
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| 260 |
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|a Vienna
|b Springer Vienna
|c 1990, 1990
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| 300 |
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|a XII, 351 p
|b online resource
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| 505 |
0 |
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|a 1 Introduction -- 1.1 Compact Models -- 1.2 Compact Models and Simulation Programs -- 1.3 Subjects Treated in This Book -- References -- 2 Some Basic Semiconductor Physics -- 2.1 Quantum-Mechanical Concepts -- 2.2 Distribution Function and Carrier Concentration -- 2.3 The Boltzmann Transport Equation -- 2.4 Bandgap Narrowing -- 2.5 Mobility and Resistivity in Silicon -- 2.6 Recombination -- 2.7 Avalanche Multplication -- 2.8 Noise Sources -- References -- 3 Modelling of Bipolar Device Phenomena -- 3.1 Injection and Transport Models -- 3.2 The Quasi-Static Approximation and the Charge Control Principle -- 3.3 Collector Currents and Stored Charges -- 3.4 Base Currents -- 3.5 Depletion Charges and Capacitances -- 3.6 Early Effect -- 3.7 Quasi-Saturation, Base Widening and Kirk Effect -- 3.8 Avalanche Multiplication -- 3.9 Series Resistances -- 3.10 Time- and Frequency-Dependent Behaviour -- 3.11 Transit Time and Cut-Off Frequency fT -- 3.12 Noise Behaviour --
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| 505 |
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|a 9.1 The Drain Current of the Junction-Gate FET -- 9.2 The Drain Current of the MESFET -- 9.3 Charges and Capacitances -- References -- 10 Parameter Determination -- 10.1 General Optimization Method -- 10.2 Specific Bipolar Measurements -- 10.3 Example of Parameter Extraction for a Bipolar Transistor Model -- 10.4 Parameter Determination for MOSFETs -- 10.5 Specific MOSFET Measurements -- References -- 11 Process and Geometry Dependence, Optimization and Statistics of Parameters -- 11.1 Unity Parameters and Geometrical Scaling in Bipolar Modelling -- 11.2 Bipolar Process Blocks and Circuit Optimization -- 11.3 Geometry- and Process Dependence of MOSFET Parameters -- 11.4 Statistics: Definitions and Formulas -- 11.5 Bipolar Statistical Modelling -- 11.6 MOS Statistical Modelling -- References
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|a 3.13 Temperature Dependences -- References -- 4 Compact Models for Vertical Bipolar Transistors -- 4.1 Ebers-Moll-Type Models -- 4.2 Gummel-Poon-Type Models -- 4.3 The MEXTRAM Model -- 4.4 Short Review -- References -- 5 Lateral pnp Transistor Models -- 5.1 Model Definitions -- 5.2 Results -- 5.3 Shortcomings of Existing Models -- References -- 6 MOSFET Physics Relevant to Device Modelling -- 6.1 Formation of the Inversion Layer -- 6.2 The Ideal MOS Transistor Current -- 6.3 The Threshold Voltage -- 6.4 Carrier Mobility in Inversion Layers -- 6.5 Saturation Mode -- 6.6 Dynamic Operation -- 6.7 Intrinsic Parasitics -- References -- 7 Models for the Enhancement-Type MOSFET -- 7.1 Long-Channel Models -- 7.2 Small Transistor Models -- 7.3 Models for Analog Applications -- References -- 8 Models for the Depletion-Type MOSFET -- 8.1 Long-Channel Model -- 8.2 Short-Channel Model.-8.3 Charges and Charge Distribution -- References -- 9 Models for the JFET and the MESFET --
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| 653 |
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|a Electronics and Microelectronics, Instrumentation
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| 653 |
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|a Computer simulation
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| 653 |
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|a Computer Modelling
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| 653 |
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|a Optical Materials
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| 653 |
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|a Electronics
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| 653 |
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|a Optical materials
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| 700 |
1 |
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|a Klaassen, Francois M.
|e [author]
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| 041 |
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7 |
|a eng
|2 ISO 639-2
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| 989 |
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|b SBA
|a Springer Book Archives -2004
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| 490 |
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|a Computational Microelectronics
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| 028 |
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|a 10.1007/978-3-7091-9043-2
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| 856 |
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|u https://doi.org/10.1007/978-3-7091-9043-2?nosfx=y
|x Verlag
|3 Volltext
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| 082 |
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|a 003.3
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| 520 |
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|a During the first decade following the invention of the transistor, progress in semiconductor device technology advanced rapidly due to an effective synergy of technological discoveries and physical understanding. Through physical reasoning, a feeling for the right assumption and the correct interpretation of experimental findings, a small group of pioneers conceived the major analytic design equations, which are currently to be found in numerous textbooks. Naturally with the growth of specific applications, the description of some characteristic properties became more complicated. For instance, in inte grated circuits this was due in part to the use of a wider bias range, the addition of inherent parasitic elements and the occurrence of multi dimensional effects in smaller devices. Since powerful computing aids became available at the same time, complicated situations in complex configurations could be analyzed by useful numerical techniques. Despite the resulting progress in device optimization, the above approach fails to provide a required compact set of device design and process control rules and a compact circuit model for the analysis of large-scale electronic designs. This book therefore takes up the original thread to some extent. Taking into account new physical effects and introducing useful but correct simplifying assumptions, the previous concepts of analytic device models have been extended to describe the characteristics of modern integrated circuit devices. This has been made possible by making extensive use of exact numerical results to gain insight into complicated situations of transistor operation
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