Metal Impurities in Silicon-Device Fabrication
Metal Impurities in Silicon-Device Fabrication treats the transition-metal impurities generated during the fabrication of silicon samples and devices. The different mechanisms responsible for contamination are discussed, and a survey is given of their impact on device performance. The specific prope...
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| Format: | eBook |
| Language: | English |
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Berlin, Heidelberg
Springer Berlin Heidelberg
2000, 2000
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| Edition: | 2nd ed. 2000 |
| Series: | Springer Series in Materials Science
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| Subjects: | |
| Online Access: | |
| Collection: | Springer Book Archives -2004 - Collection details see MPG.ReNa |
Table of Contents:
- 1. Introduction
- 2. Common Properties of Transition Metals
- 2.1 General Behavior
- 2.2 Contamination of Silicon Wafers
- 2.3 Impact on Device Performance
- 3. Properties of Transition Metals in Silicon
- 3.1 Solubilities
- 3.2 Diffusivities
- 3.3 Dissolved Impurities
- 3.4 Precipitated Metals
- 4. Properties of the Main Impurities
- 4.1 Iron
- 4.2 Nickel
- 4.3 Copper
- 4.4 Molybdenum
- 4.5 Palladium
- 4.6 Platinum
- 4.7 Gold
- 5. Properties of Rare Impurities
- 5.1 Scandium
- 5.2 Titanium
- 5.3 Vanadium
- 5.4 Chromium
- 5.5 Manganese
- 5.6 Cobalt
- 5.7 Zinc
- 5.8 Zircon
- 5.9 Niobium
- 5.10 Ruthenium
- 5.11 Rhodium
- 5.12 Silver
- 5.13 Cadmium
- 5.14 Hafnium
- 5.15 Tantalum
- 5.16 Tungsten
- 5.17 Rhenium
- 5.18 Osmium
- 5.19 Iridium
- 5.20 Mercury
- 6. Detection Methods
- 6.1 Detection of Total Impurity Content
- 6.2 Detection of Dissolved Impurities
- 6.3 Detection of Precipitates
- 7. Requirements of Modern Technology
- 7.1 Reduction of Contamination
- 8. Gettering of Impurities
- 8.1 Gettering Mechanisms
- 8.2 Control of Gettering Efficiency
- 9. Conclusion and Future Trends
- References