Electronic Transport in Hydrogenated Amorphous Semiconductors

Currently this is the book providing a thorough introduction and a unified theoretical basis for the interpretation of equilibrium transport processes in amorphous hydrogenated tetrahydrally coordinated semiconductors - a topic of great interest to physicists and material scientists (first devices f...

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Bibliographic Details
Main Authors: Overhof, Harald, Thomas, Peter (Author)
Format: eBook
Language:English
Published: Berlin, Heidelberg Springer Berlin Heidelberg 1989, 1989
Edition:1st ed. 1989
Series:Springer Tracts in Modern Physics
Subjects:
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
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245 0 0 |a Electronic Transport in Hydrogenated Amorphous Semiconductors  |h Elektronische Ressource  |c by Harald Overhof, Peter Thomas 
250 |a 1st ed. 1989 
260 |a Berlin, Heidelberg  |b Springer Berlin Heidelberg  |c 1989, 1989 
300 |a XIV, 176 p. 3 illus  |b online resource 
505 0 |a Elementary treatment of transport in amorphous semiconductors -- Review of transport experiments -- A transport theory for a homogenous model -- Detailed presentation of the theory -- The long-ranged random potential -- Temperature dependent reference energies -- The transport properties of hydrogenated amorphous semiconductors -- Concluding remarks 
653 |a Condensed Matter Physics 
653 |a Condensed matter 
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082 0 |a 530.41 
520 |a Currently this is the book providing a thorough introduction and a unified theoretical basis for the interpretation of equilibrium transport processes in amorphous hydrogenated tetrahydrally coordinated semiconductors - a topic of great interest to physicists and material scientists (first devices for practical applications are already being manufactured). Most of the relevant literature is reviewed with particular emphasis on the approach developed by the authors. It explains most of the experimental data and allows the extraction of information about microscopic transport processes and parameters from equilibrium transport data. This work treats electronic transport in the mentioned type of semiconductors and in particular in a-Si:H and a-Ge:H. From elementary concepts the theory is developed towards higher degrees of completeness and sophistication. Further refinements for coping with the complexity of real systems are given. The comparison of theory with experiment is an important part of the book