Ferroelectric Random Access Memories Fundamentals and Applications

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book...

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Bibliographic Details
Other Authors: Ishiwara, Hiroshi (Editor), Okuyama, Masanori (Editor), Arimoto, Yoshihiro (Editor)
Format: eBook
Published: Berlin, Heidelberg Springer Berlin Heidelberg 2004, 2004
Edition:1st ed. 2004
Series:Topics in Applied Physics
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
Table of Contents:
  • Part I Ferroelectric Thin Films: Overview
  • Novel Si-substituted Ferroelectric Films
  • Static and Dynamic Properties of Domains
  • Nanoscale Phenomena in Ferroelectric Thin Films
  • Part II Deposition and Characterization Methods: Sputtering Techniques
  • Chemical Approach Using Tailored Liquid Sources to Bi-based Layer-structured Perovskite Thin Films
  • Recent Development of Ferroelectric Thin Films by MOCVD
  • Materials Integration Strategies
  • Characterization by Scanning Nonlinear Dielectric Microscopy
  • Part III Fabrication Process and Circuit Design: Current Status of FeRAMs
  • Operation Principle and Circuit Design Issues
  • High Density Integration
  • Testing and Reliability
  • Part IV Advanced-Type Memories: Chain FeRAMs
  • Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell and Application to a Non-volatile SRAM
  • FET-type FeRAMs
  • Part V Applications and Future Prospects: Application to Future Information Technology World
  • Subject Index