Ferroelectric Random Access Memories Fundamentals and Applications

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book...

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Bibliographic Details
Other Authors: Ishiwara, Hiroshi (Editor), Okuyama, Masanori (Editor), Arimoto, Yoshihiro (Editor)
Format: eBook
Language:English
Published: Berlin, Heidelberg Springer Berlin Heidelberg 2004, 2004
Edition:1st ed. 2004
Series:Topics in Applied Physics
Subjects:
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
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100 1 |a Ishiwara, Hiroshi  |e [editor] 
245 0 0 |a Ferroelectric Random Access Memories  |h Elektronische Ressource  |b Fundamentals and Applications  |c edited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto 
250 |a 1st ed. 2004 
260 |a Berlin, Heidelberg  |b Springer Berlin Heidelberg  |c 2004, 2004 
300 |a XIII, 291 p  |b online resource 
505 0 |a Part I Ferroelectric Thin Films: Overview -- Novel Si-substituted Ferroelectric Films -- Static and Dynamic Properties of Domains -- Nanoscale Phenomena in Ferroelectric Thin Films -- Part II Deposition and Characterization Methods: Sputtering Techniques -- Chemical Approach Using Tailored Liquid Sources to Bi-based Layer-structured Perovskite Thin Films -- Recent Development of Ferroelectric Thin Films by MOCVD -- Materials Integration Strategies -- Characterization by Scanning Nonlinear Dielectric Microscopy -- Part III Fabrication Process and Circuit Design: Current Status of FeRAMs -- Operation Principle and Circuit Design Issues -- High Density Integration -- Testing and Reliability -- Part IV Advanced-Type Memories: Chain FeRAMs -- Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell and Application to a Non-volatile SRAM -- FET-type FeRAMs -- Part V Applications and Future Prospects: Application to Future Information Technology World -- Subject Index 
653 |a Spectrum analysis 
653 |a Metals and Alloys 
653 |a Condensed Matter Physics 
653 |a Spectroscopy 
653 |a Optical Materials 
653 |a Metals 
653 |a Optical materials 
653 |a Condensed matter 
700 1 |a Okuyama, Masanori  |e [editor] 
700 1 |a Arimoto, Yoshihiro  |e [editor] 
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520 |a In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply