Ion Beam Surface Layer Analysis Volume 1
The II. International Conference on Ion Beam Surface Layer Analysis was held on September 15-19, 1975 at the Nuclear Research Center, Karlsruhe, Germany. The date fell between two related con ferences: "Application of Ion-Beams to Materials" at Warwick, Eng land and "Atomic Collisio...
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| Format: | eBook |
| Language: | English |
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New York, NY
Springer US
1976, 1976
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| Edition: | 1st ed. 1976 |
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| Online Access: | |
| Collection: | Springer Book Archives -2004 - Collection details see MPG.ReNa |
Table of Contents:
- An Apparatus for the Study of Ion and Photon Emission from Ion Bombarded Surfaces: I. Some Preliminary Results
- Author Index
- Analysis of Ga1-xA1xAs-GaAs Heteroepitaxial Layers by Proton Backscattering
- Interdiffusion Kinetics in Thin Film Couples
- Backscattering and T.E.M. Studies of Grain Boundary Diffusion in Thin Metal Films
- The Analysis of Nickel and Chromium Migration Through Gold Layers
- Applications of Ion Beam Analysis to Insulators
- Lithium Ion Backscattering as a Novel Tool for the Charac terization of Oxidized Phases of Aluminum Obtained from Industrial Anodization Procedures
- Investigation of an Amino Suger-Like Compound from the Cell Walls of Bacteria Using Backscattering of MeV Particles
- IV. Equipment
- Versatile Apparatus for Real-Time Profiling of Interacting Thin Films Deposited in Situ
- Application of a High-Resolution MagneticSpectrometer to Near-Surface Materials Analysis
- Rutherford Backscattering Analysis with Very High Depth Resolution Using an Electrostatic Analysing System
- of Volume 1
- I. Energy Loss and Straggling
- The Treatment of Energy-Loss Fluctuations in Surface-Layer Analysis by Ion Beams
- Evidence of Solid State Effects in the Energy Loss of 4He Ions in Matter
- Empirical Stopping Cross Sections for 4He Ions
- Determination of Stopping Cross Sections by Rutherford Backscattering
- Depth Profiling of Implanted 3He in Solids by Nuclear Reaction and Rutherford Backscattering
- Energy Loss Straggling of Protons in Thick Absorbers
- Energy Dependence of Proton Straggling in Carbon
- Energy Straggling of 4He Ions in Al and Cu in the Backscattering Geometry
- Energy Spreading Calculations and Consequences
- Analysis of Nuclear Scattering Cross Sections by Means of Molecular Ions
- II. Backscattering Analysis
- Determining Concentration vs. Depth Profiles from Backscattering Spectra without Using Energy Loss Values
- Comparative Analysis of Surface Layers by Backscattering and by Auger Electron Spectroscopy
- Studies of Surface Contaminations, Composition and Formation of Superconducting Layers of V, Nb3Sn and of Tunneling Elements Using High Energetic Protons Combined with Heavy Ions
- Determination of Implanted Carbon Profiles in NbC Single Crystals from Random Backscattering Spectra
- Pore Size from Resonant Charged Particle Backscattering
- Measurement of Thermal Diffusion Profiles of Gold Electrodes on Amorphous Semiconductor Devices by Deconvolution of Ion Backscattering Spectra
- Enhanced Sensitivity of Oxygen Detection by the 3.05 MeV (?,?) Plastic Scattering
- Progress Report on the Backscattering Standards Project (Abstract)
- III. Applications of Backscattering and Combined Techniques
- Ion Beam Studies of Thin Films and Interfacial Reactions
- Studies of Tantalum Nitride Thin Film Resistors
- Investigation of CVD Tungsten Metallizations on Silicon by Backscattering
- Ion Beam Analysis of Aluminium Profiles in Heteroepitaxial Ga1-xAlxAs-Layers
- Analyzing the Formation of a Thin Compound Film by Taking Moments on Backscattering Spectra
- Computer Analysis of Nuclear Backscattering
- Some Practical Aspects of Depth Profiling Gases in Metals by Proton Backscattering: Application to Helium and Hydrogen Isotopes
- Depth Profiling of Deuterium and Helium in Metals by Elastic Proton Scattering: A Measurement of the Enhancement of the Elastic Scattering Cross Section over Rutherford Scattering Cross Section
- Near-Surface Investigation by Backscattering of N+ Ions and Grazing Angle Beam Incidence
- The Application of Low Angle Rutherford Backscattering to Surface Layer Analysis
- Measurement of Projected and Lateral Range Parameters for Low Energy Heavy Ions in Silicon by Rutherford Backscattering
- Range Parameters of Heavy Ions in Silicon and Germanium with Reduced Energies from 0.001 ? ? ? 10
- On Problems of Resolving Power in Rutherford Backscattering