Electrical and Optical Properties of Semiconductors

Bibliographic Details
Other Authors: Skobel tsyn, D. V. (Editor)
Format: eBook
Language:English
Published: New York, NY Springer US 1968, 1968
Edition:1st ed. 1968
Series:The Lebedev Physics Institute Series, Proceedings (Trudy) of the P. N. Lebedev Physics Institute
Subjects:
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
LEADER 02668nmm a2200265 u 4500
001 EB000627116
003 EBX01000000000000000480198
005 00000000000000.0
007 cr|||||||||||||||||||||
008 140122 ||| eng
020 |a 9781461585527 
100 1 |a Skobel tsyn, D. V.  |e [editor] 
245 0 0 |a Electrical and Optical Properties of Semiconductors  |h Elektronische Ressource  |c edited by D. V. Skobel tsyn 
250 |a 1st ed. 1968 
260 |a New York, NY  |b Springer US  |c 1968, 1968 
300 |a VII, 196 p  |b online resource 
505 0 |a Radiative Recombination at Dislocations in Germanium -- I. Experimental Method -- II. Radiative Recombination in Germanium Crystals with Dislocation Densities of 103104 cm-2 -- III. Radiative Recombination in Germanium Crystals with High (105-106 cm-2) Dislocation Densities. Radiative Recombination Mechanism -- IV. Determination of the Quantum Yield of the Recombination Radiation Associated with Dislocations -- Conclusions -- Literature Cited -- Impact Ionization of Impurities in Germanium at Low Temperatures -- I. Impact Ionization (Review) -- II. Experimental Technique -- III. Results of Measurements and Discussion -- IV. Breakdown -- V. Influence of a Magnetic Field on the Electrical Conductivity of Germanium in Prebreakdown and Breakdown Fields -- VI. Electrical Conductivity of Germanium in Fields Higher than the Breakdown Value -- VII. Electrical Discharge in Very Thin Germanium Layers at Low Temperatures -- Appendix. Electrical Conductivity of Zinc-Doped Germanium -- Literature Cited -- Investigation of the Infrared Absorption Spectrum of Neutron-Irradiated Silicon -- I. Effects of Radiations on a Semiconducting Crystal. Review of the Main Papers on Radiation Defects in Silicon -- II. Experimental Method -- III. Experimental Results and Discussion -- Conclusions -- Literature Cited -- Electrical and Optical Properties of Electroluminescent Capacitors Based on ZnS:Cu -- I. Principal Mechanism of Electroluminescence -- II. Experimental Method -- III. Frequency Characteristics of an Electroluminescent Capacitor -- IV. Dependence of the Characteristics of an Electroluminescent Capacitor on Voltage -- V. Rectification of the Current by an Electroluminescent Capacitor -- Conclusions -- Literature Cited 
653 |a Laser 
653 |a Lasers 
041 0 7 |a eng  |2 ISO 639-2 
989 |b SBA  |a Springer Book Archives -2004 
490 0 |a The Lebedev Physics Institute Series, Proceedings (Trudy) of the P. N. Lebedev Physics Institute 
028 5 0 |a 10.1007/978-1-4615-8552-7 
856 4 0 |u https://doi.org/10.1007/978-1-4615-8552-7?nosfx=y  |x Verlag  |3 Volltext 
082 0 |a 621.366