Optical Properties of Semiconductors
| Other Authors: | |
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| Format: | eBook |
| Language: | English |
| Published: |
New York, NY
Springer US
1976, 1976
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| Edition: | 1st ed. 1976 |
| Series: | The Lebedev Physics Institute Series, Proceedings (Trudy) of the P. N. Lebedev Physics Institute
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| Subjects: | |
| Online Access: | |
| Collection: | Springer Book Archives -2004 - Collection details see MPG.ReNa |
Table of Contents:
- Radiation Emitted from Semiconductor Lasers in Strong Magnetic Fields and under High Hydrostatic Pressures
- I Influence of Magnetic Fields and High Pressures on Energy Spectra of Semiconductors
- §1. Influence of Magnetic Fields on Energy Structure of III–V and IV–VI Semiconductor Compounds
- §2. Influence of Pressure on Energy Structures of III–V and IV–VI Compounds
- §3. Characteristics of Semiconductor Laser Operation Affected by Variation of Temperature, Pressure, and Magnetic Field
- II Experimental Method
- §1. Apparatus for Excitation of Injection Lasers and Recording of Emission Spectra
- §2. Q-Switched CO2 Laser
- §3. Technique Used in Low-Tempe rature Magnetooptic Investigations at Infrared Wavelengths
- §4. Apparatus Used in Optical Measurements at Infrared Wavelengths under High Hydrostatic Pressures at 77°K
- §5. Zinc- and Copper-Doped Germanium Infrared-Radiation Detectors
- §6. Scanning of Infrared Radiation Emitted from InSb Crystals
- Investigation of the Collective Properties of Excitons in Germanium by Long-Wavelength Infrared Spectroscopy Methods
- I Energy Spectra and Collective Properties of Excitons in Semiconductors
- 1. Energy Spectrum of Excitons
- §1. Theoretical Calculations
- §2. Experimental Results
- 2. Collective Properties of Exciton Systems
- §1. Theoretical Representations
- §2. Discussion of Experimental Results
- II Methods used in Far-Infrared Investigations of Excitons in Semiconductors
- §1. Spectroscopic Measurements
- §2. Apparatus Used in Low-Tempe rature Optical Measurements under Interband Excitation Conditions
- §3. Sources of Exciting Radiation
- §4. Thermal Conditions
- III Far-Infrared Resonance Absorption in Condensed Exciton Phase in Germanium
- §1. Absorption Spectra of Intrinsic Germanium
- §2. Discussion of Parameters of Electron —Hole Drops (n0 and ?)
- §3. Temperature Dependence of Resonance Absorption
- §4. Dependence of Resonance Absorption on Excitation Rate
- §5. Resonance Absorption in Doped Germanium
- IV Resonance Luminescence of Condensed Exciton Phase in Germanium
- §1. Experimental Investigation of Resonance Luminescence
- §2. Discussion of Experimental Results. Effective Luminescence Temperature of Drops
- §3. Influence of Inhomogeneous Deformation on Resonance Absorption and Luminescence. Mobility of Electron-Hole Drops
- V Photoionization and Excitation of Free Excitons in Germanium by Submillimeter Radiation
- §1. Photoionization and Excitation Spectra
- §2. Discussion of Experimental Results. Energy Levels of Excitons
- Literature Cited
- Collective Interactions of Excitons and Nonequilibrium Carriers in Gallium Arsenide andSilicon
- I Collective Interactions of Excitons in Semiconductors
- II Measurement Method
- §1. Optical System and Method of Recording Luminescence during Continuous Optical Excitation
- §7. Other Measurements
- III Influence of Magnetic Fields on Emission Spectra of p-n Junctions in InAs, InSb, and PbSe
- §1. Spontaneous and Coherent Radiation Emitted from InAs Injection Lasers
- §2. Radiation Emitted from InSb Injection Lasers in Strong Magnetic Fields. Position of Light-Emission Region
- §3. Spontaneous and Coherent Radiation Emitted from p-n Junctions in PbSe,
- IV Magnetically Tuned Stimulated Raman Emission from Indium Antimonide
- §1. Raman Scattering of Light by Plasmons and Landau Levels in Semiconductors
- §2. Stimulated Raman Scattering of Light Accompanied by Spin Flip in Indium Antimonide
- §3. Discussion of Results
- V Influence of Pressure on Radiation Emitted from Lead Selenide and Gallium Arsenide Semiconductor Lasers
- §1. Emission Spectra of PbSe Lasers
- §2.Emission Spectra of GaAs Lasers
- §3. Discussion of Results
- Conclusions
- Literature Cited
- §2. Optical System and Method of Recording Luminescence Due to High-Power Light Pulses
- §3. Temperature Measurement Method
- §4. Determination of Temperature Rise in a Semiconductor during Continuous Optical Excitation
- §5. Determination of Temperature Rise in a Semiconductor during Illumination with High-Power Light Pulses
- III Photoluminescence of Gallium Arsenide
- §1. Excitons in GaAs and Their Role in Radiative Recombination
- §2. Investigation of Luminescence Spectra of GaAs at Different Optical Excitation Rates and Helium Temperatures
- §3. Photoluminescence of GaAs at Temperatures 2–100°K. Investigation of Temperature Dependence of Recombination Radiation Intensity
- §4. Photoluminescence Spectra of GaAs at T = 77°K
- §5. Discussion of Results
- §6. Supplement. Possibility of Existence of Condensate in Pure Epitaxial GaAs Films
- IV Change in Absorption Coefficient of Undoped GaAs Due to Strong Optical Excitation
- V Investigation of Photoluminescence Spectra of Silicon at Different Optical Excitation Rates
- §1. Review of Literature
- §2. Experimental Investigation of the Photoluminescence of Si at Different Optical Excitation Rates
- §3. Photoluminescence Spectra of Si at Different Temperatures. Investigation of the Temperature Dependence of the Luminescence Intensity
- §4. Determination of the Binding Energy of Free Excitons from the Fall of the Luminescence Intensity with Rising Temperature
- §5. Discussion of Experimental Results
- VI Photoelectric Properties of Silicon at High Optical Excitation Rates
- §1. Review of Literature
- §2. MeasurementMethod
- §3. Photoluminescence Spectra of Si in the Presence of Static Electric Fields. Impact Ionization of Free Excitons
- §4. Kinetics of Recombination Processes in Si
- §5. Investigation of Excitons at High Concentrations in Weak Electric Fields
- Literature Cited