Growth of Crystals Volume 13
The present volume continues the tradition of the preceding volumes. covering a wide range of crystal growth problems and treating aspects of critical importance for crystalliza tion. Changes in this field of knowledge have. however, changed the criteria for selection of papers for inclusion in thi...
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| Format: | eBook |
| Language: | English |
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New York, NY
Springer US
1986, 1986
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| Edition: | 1st ed. 1986 |
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| Online Access: | |
| Collection: | Springer Book Archives -2004 - Collection details see MPG.ReNa |
Table of Contents:
- The Effects of Substrate-Mediated Interaction Between Adsorbed Atoms on the Structure of Two-Dimensional Crystals Formed from these Atoms
- Crystal Growth and Polytypism in Silicon Carbide
- IV. Mechanisms and Kinetics of Crystal Growth from the Melt and From High-Temperature Solutions
- Motion of Low-Angle Macrosteps
- Peculiarities of Melt Growth of Crystals with Different Entropies of Melting
- Kinetic Conditions at the Growth Interface of a Mixed Crystal
- General Approach to Monte Carlo Simulation of Crystal Growth
- Parameters Characterizing the Kinetics of Dissolution of Crystalline Germanium in Liquid Ge-Au
- V. Growth of Crystals from the Melt
- Stability of Crystallization in Edge-Defined Film-Fed Growth from the Melt
- Shape and Properties of Crystals Grown from the Melt by the Stepanov Techniques
- Crystal Shape Stability in Meniscus-Controlled Growth Processes
- Numerical Analysis of Heat and Mass Transfer in the Growth of Large Single Crystals from the Melt
- Phase Diagrams of Binary Systems Formed by Rare Earth Trifluorides
- VI. Growth of Crystals from Solutions
- Progress in Flux Growth of Large Crystals
- Growth of Emerald Single Crystals
- Some Technological Procedures and Equipment for Hydrothermal Growth of Single Crystals
- The Role Played by Me2+ in Hydrothermal Crystallization of Germanates of Divalent Metals
- VII. Defect Structure in Crystals: Relation to Growth Conditions
- Theoretical and Experimental Studies of Generation of Stress and Dislocations in Growing Crystals
- Growth Defects in Semiconductor Crystals
- Formation of Defects in Epitaxial Heterostructures and Multicomponent Solid Solutions of Semiconductor Compounds
- Growth and Structure of Synthetic Amethyst Crystals
- Defect Structure of Sb2S3 Crystals Revealed by Electron Microscope Crystal Lattice Imaging Techniques
- I. Crystallization of Proteins
- Protein Molecules and Crystals
- II. Mechanisms and Kinetics of Crystal Growth by Vapor Deposition
- Equilibrium Adsorption Layers on GaAs (111) and Si (111) Surfaces in CVD Growth
- Role of Adsorption Layer in Chemical Vapor Deposition
- Kinetics and Mechanism of Gallium Arsenide Growth in Gas-Transport Systems
- Local Epitaxy Under Conditions of Strong Growth Rate Anisotropy
- Electron Microscopic Observation and Computer Simulation of Step Redistribution in Step Trains due to Changes in Step Density
- Crystal Growth Under Thermodynamically Metastable Conditions
- Role of Defects in the Nucleation of Whiskers Growing from Vapor
- Field Emission Microscopic Study of Thermal Field- and Condensation-Induced Growth Forms of Crystal Tips
- III. Epitaxy
- Peculiarities and Mechanism of Graphoepitaxy
- Application of Electron Microscopy to a Study of Kinetics and Mechanism of Crystallization
- On the Structure of Crystalline Graphite Intergrowths
- VIII. New Materials: Equipment for Crystal Growth
- Crystal Growth and Properties of Some New Ionic Conductors
- Modern Methods of Monitoring and Control in Crystal Growth
- Application of Laser Heating to Crystal Growth