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04329nmm a2200385 u 4500 |
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EBX01000000000000000478285 |
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140122 ||| eng |
| 020 |
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|a 9781461536628
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| 100 |
1 |
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|a Bagdasarov, Kh.S.
|e [editor]
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| 245 |
0 |
0 |
|a Growth of Crystals
|h Elektronische Ressource
|b Volume 16
|c edited by Kh.S. Bagdasarov, E.L. Lube
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| 250 |
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|a 1st ed. 1991
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| 260 |
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|a New York, NY
|b Springer US
|c 1991, 1991
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| 300 |
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|a VIII, 278 p
|b online resource
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| 505 |
0 |
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|a I. Mechanisms of Crystal Growth from the Melt -- Evolution and Selection during Growth of Semicellular and Eutectic Patterns -- Effect of an Impurity on the Nonequilibrium Vacancy Concentration in a Growing Crystal -- Effect of Soluble and Insoluble Additives on the Crystallization of Metals from the Melt -- II. Growth of Crystals from Melts and High-Temperature Solutions -- Synthesis and Electrophysical Properties of Superionic Conductors Li3M2(PO4)3 (M = Fe, Sc, Cr) -- Preparation of Single Crystals of the Nonstoichiometric Fluorite Phases M1_xRxF2+x (M = Ca, Sr, Ba; R = Rare Earth Elements) by the Bridgman-Stockbarger Method -- Hydrothermal Chemistry and Growth of Hexagonal Germanium Dioxide -- III. Crystallization of Films -- Liquid-Phase Electroepitaxy -- Molecular Beam Epitaxy of Semiconductor, Metal, and Dielectric Film -- Relation between Growth Conditions, Structure, and Cathodoluminescence of Epitaxial Layers of ZnSe on GaAs --
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| 505 |
0 |
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|a Electromagnetic Methods for Influencing the Hydrodynamics and Heat and Mass Transfer during Growth of Large Single Srystals (Review)
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| 505 |
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|a Kinetics of Gallium Arsenide Doping in Gas-Phase Epitaxy -- Photostimulated Growth of Doped Lead Telluride -- IV. Crystallization of Biological Substances -- Crystallization of Ribosomes, Ribosomal Subunits, and Individual Ribosomal Proteins -- Chromatographie Methods of Purification and Crystallization of Spherical Viruses -- V. Experimental Methods for Studying Crystallization Processes -- Study of Melt Structure and Crystallization Processes by High-Temperature Raman Spectroscopy -- Acoustic Emission Study of Crystallization from the Melt. A Problem of Identification -- Electron Microscopy in Studies of Defect Formation Processes in Semiconducting Crystals -- VI. Mathematical Modeling and Regulation of Crystallization Processes -- Computational Experimentation in Studies of Crystallization Processes -- Mathematical Modeling of Melt Hydrodynamics in the Bridgman Crystallization Process with Accelerated Crucible Rotation --
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| 653 |
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|a Spectrum analysis
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| 653 |
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|a Inorganic chemistry
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| 653 |
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|a Condensed Matter Physics
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| 653 |
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|a Spectroscopy
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| 653 |
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|a Inorganic Chemistry
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| 653 |
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|a Crystallography
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| 653 |
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|a Condensed matter
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| 653 |
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|a Crystallography and Scattering Methods
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| 700 |
1 |
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|a Lube, E.L.
|e [editor]
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| 041 |
0 |
7 |
|a eng
|2 ISO 639-2
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| 989 |
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|b SBA
|a Springer Book Archives -2004
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| 490 |
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|a Growth of Crystals
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| 028 |
5 |
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|a 10.1007/978-1-4615-3662-8
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| 856 |
4 |
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|u https://doi.org/10.1007/978-1-4615-3662-8?nosfx=y
|x Verlag
|3 Volltext
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| 082 |
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|a 546
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| 520 |
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|a Papers from the Sixth All-Union Conference on Growth of Crystals comprise Volume 16 of this series. The articles were chosen with a view to more fully elucidate the basic problems of crystal growth as reflected in domestic and foreign reviews and in original studies. This volume consists of six parts. Part I is devoted to mechanisms of crystal growth that are important for production of materials with given properties. This part examines the temporal evolution of an inhomogeneous state and the array of semicellular and eutectic structures during microstructure formation, the effect of impurity on the nonequi librium vacancy concentration in a growing crystal, and the role of soluble and insoluble impurities in the birth and growth of crystals. Part II deals with the synthesis and electrophysical properties of novel solid electrolytes that are promis ing for practical use, analysis and correlation of the large amount of data on growth by the Bridgman-Stockbar ger method of single crystals of fluorite phases far from stoichiometry, and the hydrothermal chemistry and growth of hexagonal germanium dioxide
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