Metallization and Metal-Semiconductor Interfaces
This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progre...
Other Authors: | |
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Format: | eBook |
Language: | English |
Published: |
New York, NY
Springer US
1989, 1989
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Edition: | 1st ed. 1989 |
Series: | NATO Science Series B:, Physics
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Subjects: | |
Online Access: | |
Collection: | Springer Book Archives -2004 - Collection details see MPG.ReNa |
Table of Contents:
- to Metallization and Metal-Semiconductor Interfaces
- GENERAL SCHOTTKY BARRIER MECHANISMS
- Mechanisms of Barrier Formation in Schottky Contacts
- The Role of Defects and Metal States at the Metal-Semiconc uctor Interface
- Metallization, Bonding and Energetics of Ordered Phases of A1 on Si(l 11)
- DEFECTS AT METAL-SEMICONDUCTOR CONTACTS
- Factors Influencing Electrical Barriers at Metal-Semiconductor Interfaces: Gold and Antimony on Indium Phosphide and Cadmium Telluride
- Deep Levels and Band Bending at Metal-Semiconductor Interfaces
- Influence of the Atomic Scale Roughness of a Clean Si Surface on the Interface Formation with Metals
- ?-Doping Layers. The Shaping Of Barrier Potentials By Planar Doping
- TEMPERATURE DEPENDENT METALLIZATION STUDIES
- Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfaces
- Metal-GaAs(l 10) Interfaces formed at Low Temperature: from Adsorbate- to Metal-Induced Gap States
- Thermal Effects in Silicon-Metal Interface Formation: A Photoemission Study of Si/Gd and Si/Yb
- SILICON-SILICIDE INTERFACES
- Structures and Electronic Properties of Epitaxial Silicon-Silicide Interfaces
- Calculated Electronic Structures and Schottky Barrier Heights of (111) NiS22/Si A- and B- Type Interfaces
- Electrical (Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes
- BAND OFFSETS AND BARRIERS
- Relation Between Schottky Barrier Heights, Band Offsets and the Energy Levels of Transition Metal Impurities
- Screening Near Semiconductor Heterojunctions and Valence Band Offsets
- METALLIZATION REVIEW
- The Theory of Schottky Barriers: Controversy or Consensus?
- Metallization of Semiconductor Surfaces as a Function of Coverages
- APPLICATIONS OF TUNNELING TO METAL-SEMICONDUCTOR INTERFACES
- Fermi-Level Pinning by Oxygen and Antimony Adsorbates on the GaAs(l 10) Surface by Scanning Tunneling Spectroscopy
- Initial Stages of Metal-Semiconductor Interface Formation
- Tunneling Spectroscopy and Potentiometry on Cleaved (Al)( jaAs Multilayers
- ALKALI METALS-SEMICONDUCTORS INTERFACES
- Metallization of Metal-Semiconductor Interfaces
- Electronic Structure and Excitations of Metal Overlayer on Semiconductor Surfaces
- Alkali-Metal Overlayers on Silicon Surfaces
- Present Understanding of a Model Metal/Semiconductor Junction: K/Si(001)2x1
- Inverse-Photoemission Studies of Clean and Metal-Covered Semiconductor Surfaces
- Influence of Overlayer Metallization on Schottky-Barrier Formation
- On the Formation of Metal-Semiconductor Interface: The Case of K on GaAs(l 10)
- A Theoretical Study of Na Overlayers on the GaAs(l 10) Surface
- Electronic and Structural Properties and Schottky Barrier Formation of Alkali Metal-Semiconductor Interfaces
- Adsorption of Cs on Hydrogenated W(110) Surfaces
- Participants