Metallization and Metal-Semiconductor Interfaces

This book represents the work presented at a NATO Advanced Research Workshop on "Metallization and Metal-Semiconductor Interfaces", held at the Technical University of Munich, Garching, W. Germany from 22-26 August 1988. The major focus of the workshop was to evaluate critically the progre...

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Bibliographic Details
Other Authors: Batra, Inder P. (Editor)
Format: eBook
Language:English
Published: New York, NY Springer US 1989, 1989
Edition:1st ed. 1989
Series:NATO Science Series B:, Physics
Subjects:
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
Table of Contents:
  • to Metallization and Metal-Semiconductor Interfaces
  • GENERAL SCHOTTKY BARRIER MECHANISMS
  • Mechanisms of Barrier Formation in Schottky Contacts
  • The Role of Defects and Metal States at the Metal-Semiconc uctor Interface
  • Metallization, Bonding and Energetics of Ordered Phases of A1 on Si(l 11)
  • DEFECTS AT METAL-SEMICONDUCTOR CONTACTS
  • Factors Influencing Electrical Barriers at Metal-Semiconductor Interfaces: Gold and Antimony on Indium Phosphide and Cadmium Telluride
  • Deep Levels and Band Bending at Metal-Semiconductor Interfaces
  • Influence of the Atomic Scale Roughness of a Clean Si Surface on the Interface Formation with Metals
  • ?-Doping Layers. The Shaping Of Barrier Potentials By Planar Doping
  • TEMPERATURE DEPENDENT METALLIZATION STUDIES
  • Disruption, Metallization, and Electrical Properties of Metal GaAs and InP Semiconductor Interfaces
  • Metal-GaAs(l 10) Interfaces formed at Low Temperature: from Adsorbate- to Metal-Induced Gap States
  • Thermal Effects in Silicon-Metal Interface Formation: A Photoemission Study of Si/Gd and Si/Yb
  • SILICON-SILICIDE INTERFACES
  • Structures and Electronic Properties of Epitaxial Silicon-Silicide Interfaces
  • Calculated Electronic Structures and Schottky Barrier Heights of (111) NiS22/Si A- and B- Type Interfaces
  • Electrical (Characterization of Interface States at Schottky Contacts and MIS Tunnel Diodes
  • BAND OFFSETS AND BARRIERS
  • Relation Between Schottky Barrier Heights, Band Offsets and the Energy Levels of Transition Metal Impurities
  • Screening Near Semiconductor Heterojunctions and Valence Band Offsets
  • METALLIZATION REVIEW
  • The Theory of Schottky Barriers: Controversy or Consensus?
  • Metallization of Semiconductor Surfaces as a Function of Coverages
  • APPLICATIONS OF TUNNELING TO METAL-SEMICONDUCTOR INTERFACES
  • Fermi-Level Pinning by Oxygen and Antimony Adsorbates on the GaAs(l 10) Surface by Scanning Tunneling Spectroscopy
  • Initial Stages of Metal-Semiconductor Interface Formation
  • Tunneling Spectroscopy and Potentiometry on Cleaved (Al)( jaAs Multilayers
  • ALKALI METALS-SEMICONDUCTORS INTERFACES
  • Metallization of Metal-Semiconductor Interfaces
  • Electronic Structure and Excitations of Metal Overlayer on Semiconductor Surfaces
  • Alkali-Metal Overlayers on Silicon Surfaces
  • Present Understanding of a Model Metal/Semiconductor Junction: K/Si(001)2x1
  • Inverse-Photoemission Studies of Clean and Metal-Covered Semiconductor Surfaces
  • Influence of Overlayer Metallization on Schottky-Barrier Formation
  • On the Formation of Metal-Semiconductor Interface: The Case of K on GaAs(l 10)
  • A Theoretical Study of Na Overlayers on the GaAs(l 10) Surface
  • Electronic and Structural Properties and Schottky Barrier Formation of Alkali Metal-Semiconductor Interfaces
  • Adsorption of Cs on Hydrogenated W(110) Surfaces
  • Participants