Silicon-on-Insulator Technology: Materials to VLSI : Materials to VLSI

Silicon-on-Insulator Technology: Materials to VLSI, Third Edition, retraces the evolution of SOI materials, devices and circuits over a period of roughly twenty years. Twenty years of progress, research and development during which SOI material fabrication techniques have been born and abandoned, de...

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Main Author: Colinge, J.-P.
Corporate Author: SpringerLink (Online service)
Format: eBook
Language:English
Published: New York, NY Springer US 2004, 2004
Edition:3rd ed. 2004
Subjects:
Online Access:
Collection: Springer Book Archives -2004 - Collection details see MPG.ReNa
Table of Contents:
  • 1 Introduction
  • 2 SOI Materials
  • 2.1 Introduction
  • 2.2 Heteroepitaxial techniques
  • 2.3 Dielectric Isolation (DI)
  • 2.4 Polysilicon melting and recrystallization
  • 2.5 Homoepitaxial techniques
  • 2.6 FIPOS
  • 2.7 Ion beam synthesis of a buried insulator
  • 2.8 Wafer Bonding and Etch Back (BESOI)
  • 2.9 Layer transfer techniques
  • 2.10 Strained silicon on insulator (SSOI)
  • 2.11 Silicon on diamond
  • 2.12 Silicon-on-nothing (SON)
  • 3 SOI Materials Characterization
  • 3.1 Introduction
  • 3.2 Film thickness measurement
  • 3.3 Crystal quality
  • 3.4 Carrier lifetime
  • 3.5 Silicon/Insulator interfaces
  • 4 SOI CMOS Technology
  • 4.1 SOI CMOS processing
  • 4.2 Field isolation
  • 4.3 Channel doping profile
  • 4.4 Source and drain engineering
  • 4.5 Gate stack
  • 4.6 SOI MOSFET layout
  • 4.7 SOI-bulk CMOS design comparison
  • 4.8 ESD protection
  • 5 The SOI MOSFET
  • 5.1 Capacitances
  • 5.2 Fully and partially depleted devices
  • 5.3 Threshold voltage
  • 5.4 Current-voltage cha